PART |
Description |
Maker |
APT2X60D120J APT2X61D120J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1200V 60A
|
ADPOW[Advanced Power Technology]
|
APT2X61D20J APT2X60D20J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 200V 60A
|
Advanced Power Technology
|
APT2X31D120J APT2X30D120J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1200V 30A CONNECTOR ACCESSORY 双超快软恢复整流二极
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
|
408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
STE250N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE -通道增强型功率MOS器件中的ISOTOP封装
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
STE38NB50 5564 |
N-Channel 500V-0.11Ω-38A- ISOTOP PowerMESHTM MOSFET(N沟道MOSFET) N沟道500V -0.11Ω- 38A条,1000V的集电极PowerMESHTM MOSFET的(不适用沟道MOSFET的) N - CHANNEL PowerMESH MOSFET N - CHANNEL 500V - 0.11 - 38A - ISOTOP PowerMESH TM MOSFET From old datasheet system N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
OP-04G OP-04N OP-14G OP-14N |
DUAL OP-AMP, 1.3 MHz BAND WIDTH, UUC14 DIE DUAL OP-AMP, 750 uV OFFSET-MAX, 1.3 MHz BAND WIDTH, UUC14 DIE DUAL OP-AMP, 2000 uV OFFSET-MAX, 1.3 MHz BAND WIDTH, UUC14 DIE
|
Analog Devices, Inc.
|
EF9365P EF9366P |
Triple 3-Input NOR Gate; ; Package: Die (Military Visual) Quad 2-Input OR Gate; Temperature Range: -; Package: 14-SBDIP
|
|
APT150GN120JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
DPLS160-7 |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3 Epitaxial Planar Die Construction
|
Diodes, Inc. Diodes Incorporated
|